Revolutionizing Space Electronics: Infineon's GaN Transistor Breakthrough

Infineon Technologies has embarked on a mission to reshape space electronics with the announcement of their cutting-edge rad-hardened GaN transistor. This pioneering device is designed to withstand the extreme conditions of space, meeting rigorous standards that ensure its reliability and performance.

A New Era in Space Technology

At the heart of this development is the JANSG2N7697UFHC, Infineon’s 100V 52A GaN transistor, which has recently achieved the distinguished JANS certification. According to Electronics Weekly, this marks a significant milestone as the GaN transistor sets a new benchmark with its 4mΩ typical on-resistance and a compact 7.1 x 5.3mm hermetic ceramic surface mount packaging, perfectly suited for deep space missions.

Meeting the Highest Standards

The rigorous screening process behind the JANS certification ensures these transistors are equipped to handle the harshest of space environments. Withstanding a LET (GaN) value of 70MeV.cm2/mg (Au ion) and being screened up to 500krad(Si) for TID, Infineon showcases a commitment to quality that is pivotal for mission-critical applications, like on-orbit space vehicles and deep-space probes.

Expanding the GaN Horizons

Infineon’s ambitious roadmap contains more than just the JANS certified devices. Similar transistors, though not JANS certified, are available for varied applications, widening the horizon for both commercial and specialized space technologies. In addition to this, evaluation boards and engineering samples ensure easy adaptation and integration into existing systems.

The Future of GaN in Space

This advancement in GaN technology is a leap forward not only for Infineon but for the entire aerospace industry. As Infineon’s pipeline continues to expand with other JANS-qualified parts, the future of space electronics looks promising. These innovations cultivate hope for more resilient and effective space exploration technologies.

Infineon’s Unyielding Pursuit of Excellence

The release of the GaN transistor marks a significant evolution in space technology, underscoring Infineon’s role as a leader in the field. Their dedication to innovation and excellence is the cornerstone for the development of technologies that propel humanity’s reach into outer space.

In conclusion, Infineon’s rad-hardened GaN transistors exemplify the pinnacle of engineering excellence, promising a brighter and more robust future for space exploration tools and systems.