Infineon’s Breakthrough in Space-Tech: GaN Transistors Lead the Way

In a significant technological leap, Infineon has introduced the first-ever radiation-hardened GaN power transistors that have received full qualification from the United States Defense Logistics Agency (DLA) under its stringent Joint Army-Navy Space (JANS) specifications. This pioneering certification marks a new era for space and defense applications, highlighting the unmatched reliability and performance of these components under extreme conditions.

The Symbol of Reliability

Infineon’s GaN transistors are a testament to the company’s advanced GaN fabrication capabilities. These transistors have been meticulously designed and tested to endure the harsh conditions typical of on-orbit space vehicles and deep space probes. As stated in All About Circuits, the achievement underscores Infineon’s commitment to extending its leadership with radiation-hardened components.

Meeting the Extremes

JANS qualification is not merely an accolade; it highlights a rigorous testing regime that the GaN transistors have undergone. These tests confirm their resilience to various adverse conditions, including high radiation exposure and mechanical stresses encountered during extended space missions. The devices boast a remarkable total ionizing dose tolerance of 500 krad(Si), conducting tests using stringent protocols to guarantee reliability.

GaN vs. Silicon: The Architectural Edge

Infineon’s GaN transistors bring substantial advantages over traditional silicon devices. Utilizing a two-dimensional electron gas (2DEG) channel at the GaN/AlGaN heterojunction, these transistors offer high electron mobility and minimal conduction losses. This contributes to faster switching speeds, improved efficiency, and better overall performance.

Innovative Packaging and Integration

Infineon’s transistors are housed in PowIR-SMD, a cutting-edge ceramic package designed specifically for high-reliability GaN. This design ensures a smaller footprint and reduced inductance, enhancing performance further. With compatibility for integration into various systems, the GaN transistors pave the way for superior system-level applications.

A Milestone for the Future

This groundbreaking release positions Infineon as a leader in the industry, being the first to offer JANS-qualified GaN components made entirely in-house. This control over production ensures a stable supply chain for aerospace and defense industries, safeguarding against geopolitical risks. These advancements in GaN technology signal a promising future for space exploration and defense solutions.

Infineon’s innovation doesn’t just stop here; the continuous evolution of GaN technology promises a brighter and more efficient future in space exploration and beyond. As exploration efforts intensify, the role of reliable, advanced components like Infineon’s GaN transistors becomes even more critical.