Infineon's Space Revolution: Radiation-Hardened GaN Transistors

With the vast universe as their frontier, Infineon Technologies is paving the path to space exploration with their newly unveiled radiation-hardened gallium nitride (GaN) transistors. These cutting-edge devices, based on Infineon’s CoolGaN technology, hold the promise of revolutionizing the aerospace industry with applications ranging from orbiting space vehicles to deep space probes.

Leading the Charge into Space

A remarkable milestone for Infineon, this launch is just a year after their initial CoolGaN proclamation. The new family of GaN High Electron Mobility Transistors (HEMTs) integrates exceptional radiation-tolerance capabilities, targeting some of the most critical space industry applications.

The Power Behind GaN

The technological prowess of these transistors lies in their unique composition. GaN HEMTs provide unmatched radiation hardness thanks to their wide band gap structure, high electro-mobility, and impressive power density. As Josemari Mapa highlights, these features enable them to transcend traditional silicon or gallium arsenide devices for high-frequency applications essential for space missions.

Within the Fabric of Innovation

Infineon’s commitment to in-house manufacturing is a game changer in maintaining a consistent supply chain devoid of external dependencies. As Sean Darcy points out, their European fab’s autonomy ensures a robust production line for these specialized devices.

An Alliant Alliance for Space

The debut trio of Infineon’s GaN HEMTs encompass 100 V, 52 A devices with technological nuances designed to endure the extreme conditions of space. Their capabilities stem from being Single Event Effect (SEE) hardened and meeting rigorous Total Ionizing Dose (TID) specifications, with the top-tier JANS-certified device expected to launch this summer.

The Future of Space Technology

According to Fierce Electronics, as Infineon charges forward with innovations that fortify spacecraft and extraterrestrial endeavors, the horizon for space exploration looks brighter. These advanced devices are set to empower future missions, propelling human curiosity beyond our stratosphere.

Stay tuned, as Infineon’s radiation-hardened GaN transistors prepare to take the ultimate leap into the cosmos, unlocking infinite possibilities for what lies beyond earthbound confines.